
Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Fluorescent Light Controller, 0.5A, 32kHz Switching Freq-Max, PDIP14, PLASTIC, MS-001-AC, DIP-14

Half Bridge Based MOSFET Driver, 0.35A, CMOS, PDIP8, PLASTIC, MS-001AB, DIP-8
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Control IC, CIC(R) International Rectifier IR 2151 Case type DIP 8 L Specification Control IC 600 V, 100/210 mA
Half Bridge Based MOSFET Driver, 0.5A, BICMOS, PDIP28, PLASTIC, MS-011AB, DIP-28