Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
Telecom Circuit, 1-Func, BICMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Transceiver, 1-Func, BICMOS, PDSO24, 0.300 INCH, SOIC-24
1200V 10A N-Ch SiC MOSFET TO-247 585mR Rds(on)
Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Inductor Power Shielded Wirewound 0.56uH 30% 100KHz 1.3A 0.07Ohm DCR T/R
Inductor Power Shielded Wirewound 2.7uH 20% 100KHz 0.72A 0.245Ohm DCR T/R
Inductor Power Shielded Wirewound 3.3uH 20% 100KHz 0.67A 0.265Ohm DCR T/R
SiC MOSFET 1200V 14A N-Channel TO-247 280mR
650V 29A N-Ch SiC MOSFET TO-220-3
Inductor Power Shielded Wirewound 2.2uH 20% 100KHz 0.77A 0.205Ohm DCR T/R
Inductor Power Shielded Wirewound 1.5uH 30% 100KHz 0.92A 0.145Ohm DCR T/R
SiC MOSFET N-Ch 1200V 22A 208mR TO-247
N-CH Power MOSFET 500V 2A 3-Pin Through Hole
Inductor Power Shielded Wirewound 4.7uH 20% 100KHz 0.6A 0.35Ohm DCR T/R
Inductor Power Shielded Wirewound 15uH 20% 100KHz 0.27A 1.52Ohm DCR T/R
Inductor Power Shielded Wirewound 10uH 20% 100KHz 0.36A 0.9Ohm DCR T/R
Inductor Power Shielded Wirewound 6.8uH 20% 100KHz 0.49A 0.515Ohm DCR T/R
Inductor Power Shielded Wirewound 22uH 20% 100KHz 0.25A 1.7Ohm DCR T/R
