Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Power Field-Effect Transistor, 0.21A I(D), 400V, 18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
600V N-Channel MOSFET, 120mA ID, 45Ω RDS(on), SOT-223
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
N-Channel MOSFET, 240V, 350mA, 6 Ohm, SOT-223, Surface Mount
600V N-Channel MOSFET, 120mA, 45 Ohm, SOT-223
P-Channel MOSFET, 60V, 1.9A, 300mR, SOT-223, Surface Mount
N-CH MOSFET 50V 3.2A SOT-223 Single
N-CH MOSFET 240V 0.35A SOT-223 Surface Mount Transistor
P-Channel JFET, 60V, 1.9A ID, SOT-223, Surface Mount
TRANS NPN DARL 80V 0.5A SOT-223
N/A Infineon Technologies BSP 50 NPN Case type SOT 223 I(C)
N/A NXP Semiconductors BSP 43 NPN Case type SOT 223 I(C) 1 A
Transistors Darlington NPN Transistor Darlington
NXP BSP60 Bipolar (BJT) Single Transistor, Dual PNP, -45 V, 200 MHz, 1.25 W, -1 A, 1000 hFE New
Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
Bipolar Transistors - BJT TRANS DARLINGTON TAPE-7
