650V N-Channel MOSFET, 280mR Rds On, 13.8A ID, TO-247
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
650V 8.7A N-Channel MOSFET TO-247 420mR
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
650V 6A N-Channel MOSFET TO-247 660mR RdsOn
Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
650V 68.5A N-Ch MOSFET, 41mR Rds On, TO-247
Power Field-Effect Transistor,
650V 22.4A N-Ch MOSFET TO-247 150mR Power FET
650V 43.3A N-Channel MOSFET TO-247 80mR
Power Field-Effect Transistor, 63.3A I(D), 650V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
550V 62A N-CH Power MOSFET TO-247
FIBOX IPW 2819-G INSTRUMENT PROTECTION WINDOW, 11INX7.5IN
INSTRUMENT PROTECTION WINDOW, 11INX7.5IN; For Use With:Front Panel Mounted Meters; Highest NEMA Rating:4X; External Height - Imperial:11; External Width - Imperial:7.5; External Depth:2.8; External Depth - Imperial:2.8
Unspecified
Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
900V 5.1A N-CH MOSFET TO-247 1.2 Ohm
