SiC Schottky Rectifier Diode, 600V, 4A, TO-252, SMD
Wolfspeed C3M0060065D 650V 60mΩ Silicon Carbide (SiC) MOSFET, TO-247-3
GeneSiC G3R45MT17D Silicon Carbide (SiC) MOSFET, 1700V, 61A, 45mΩ, TO-247-3
1200V, 25mΩ, N-Channel Silicon Carbide (SiC) MOSFET, TSC (U2) Package
1200 V, 65 mΩ, Discrete Silicon Carbide (SiC) MOSFET
SiC Power Module - 1200V High Power Silicon Carbide Half-Bridge
GaN HEMT RF Evaluation Board for CGHV59350F, 5.2-5.9 GHz, 350W
GaN HEMT Die, 70 W, 40 V, DC-18 GHz
GaN HEMT, 330 W, 50 V, 1.2 – 1.4 GHz, L-Band Radar RF Power Transistor
SiC MOSFET, 47 mOhm, 1200 V, TSC (U2), Industrial
Six-Channel Gate Driver Board for 1200V SiC MOSFET Power Modules
1200 V, 25 mΩ, Discrete Silicon Carbide (SiC) MOSFET
1200 V, 47 mΩ, Discrete Gen 4 Silicon Carbide (SiC) MOSFET
1200 V, 65 mΩ, TO-263-7 XL, Discrete Silicon Carbide (SiC) MOSFET
1200V 11A 350mΩ SiC MOSFET N-Channel Enhancement Mode
1200 V, 47 mΩ, Discrete Silicon Carbide (SiC) MOSFET
1700V 160mΩ SiC MOSFET N-Channel Enhancement Mode
1200 V, 21 mΩ, Silicon Carbide (SiC) MOSFET
1000 V, 120 mΩ, Discrete SiC MOSFET, TO-247-4
1200 V 40 mΩ SiC MOSFET, N-Channel Enhancement Mode
