Surface Mount FET, 2.8A ID, 8V Drain to Source Breakdown Voltage, Lead Free
NE651R479 Series 1 W 35 dB 3.7 GHz Medium Power GaAs HJ-FET
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN