
Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

Small Signal Field-Effect Transistor, 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DIP-4

International Rectifier IRFD9024PBF, MOSFET IRFD 9024 P channel HEXDIP -1.6A 60V

Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Power Field-Effect Transistor, 45A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN