
Power Field-Effect Transistor, 19A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Power Field-Effect Transistor, 52A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN

FUJI ELECTRIC 2MBI100U4A-120-50 IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module