Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
N-Channel MOSFET, 100V, 1.2A, 600mR, SOT-223, Surface Mount
P-Channel JFET, 100V, 980mA, SOT-223, Surface Mount
P-Channel MOSFET, 250V, 430mA, 4ohm, SOT-223, Surface Mount
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
N-Channel MOSFET, 60V, 2.9A, 120mΩ, SOT-223, Surface Mount
Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Small Signal Field-Effect Transistor,
P-Channel JFET, 1A ID, -100V Vdss, SOT-223, Surface Mount
N-Ch MOSFET, 100V, 1.8A, SOT-223, Surface Mount
P-Channel MOSFET, 60V, 1.9A, 300mR, SOT-223, Surface Mount
N-Channel MOSFET, 60V, 2.6A, 70mR Rds(on), SOT-223
P-Channel MOSFET, 100V, 0.68A, 1.8R, SOT-223
SENSOR, PRESSURE, 0-100 BAR, 2XPNP; Operating Pressure Max:100bar; Sensor Output1:PNP; Supply Current:500mA; Voltage Rating:36VDC; Port Style:G1/4 (1/4BSP); Pressure Measurement Type:Absolute; External Depth:90mm; Operating Pressure Min:0bar; Operating Pressure Range:0bar to 100bar
P-Channel MOSFET, 60V, 1.17A, 800mR, SOT-223
P-Channel JFET, 60V, 1.9A ID, SOT-223, Surface Mount