Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
