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| Image | Part Number | Manufacturer | Description |
|---|---|---|---|
 | EE-SX770 | Omron | Photoelectric Sensor, Through-Beam, NPN, 5mm, 24V |
 | E2A-M30LN30-M1-B1 | Omron | Inductive Proximity Sensor 30mm PNP 24VDC Brass Cyl |
 | AMN31111 | Panasonic | IR Proximity Sensor, Digital Output, 5m, TO-5 |
 | E2E2-X5C1-M1 | Omron | Inductive Proximity Sensor NPN NO 5mm 10-55VDC 600Hz |
 | E2A-M30KN20-M1-C1 | Omron | Inductive Proximity Sensor NPN NO 20mm 10-32VDC |
 | PCA8886TS/Q900/1,1 | NXP | Capacitive Proximity Sensor, Current Sinking, 3-9VDC, 16-Pin TSSOP |
 | OPB829AZ | TT | Photointerrupter, Phototransistor, 30V, 50mA, 890nm, IR |
 | E3T-ST12 | Omron | Photoelectric Sensor, Thru-Beam, NPN, 1m, 12-24VDC |
 | TCD1705D(Z) | Toshiba | CCD Image Sensor, 7450 Pixels, 22-Pin CDIP, Through Hole |
 | E2E-X5F1 | Omron | PNP Inductive Proximity Sensor, 5mm, 40VDC, IP67, Brass |
 | SDP8476-201 | Honeywell | NPN Phototransistor, 935nm, 30V, 6mA, Through Hole |
 | OP505B | TT | NPN Phototransistor, 30V VCEO, 935nm, 25° Viewing Angle, Through Hole |
 | QSD724 | Onsemi | Infrared Phototransistor, NPN, 30V, 880nm, TO-18 |
 | AMN13112 | Panasonic | IR Proximity Sensor, Digital Output, 3-6VDC, 170uA |
 | E2FM-X5B1-M1 | Omron | Inductive Proximity Sensor, 5mm, PNP, 10-30VDC, IP67 |
 | E2AS08LS02M1C1 | Omron | M8 Inductive Proximity Sensor, 2mm, NPN, Shielded, 10-32V |
 | EE-SX3081 | Omron | Photointerrupter Transmissive 5mm, 28V VCEO, 20us Fall Time, 940nm |
 | TCM9001MD(ES) | Toshiba | CMOS Image Sensor, 648x492, 25-Pin BGA, Color |
 | EE-SX4009-P1 | Omron | Photointerrupter Transmissive 5mm, 28V VCEO, Open Collector |
 | PP3G07S | Stanley | PIN Photodiode Chip 950nm 2-Pin Through Hole |